This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features:
- Transistor Type: NPN Max Collector Current(IC): 1.5A
- Max Collector-Emitter Voltage (VCE): 45V
- Max Collector-Base Voltage (VCB): 45V
- Max Emitter-Base Voltage (VEBO): 5V
- Max Collector Dissipation (Pc): 12.5 Watt
- Max Transition Frequency (fT): 190 MHz
- Minimum & Maximum DC Current Gain (hFE): 40 – 250
General Specification | |
Collector−Emitter Voltage | 45 |
Collector−Base Voltage | 45 |
Emitter−Base Voltage | 5 |
Product Type | BD135G BD137G BD139G Plastic Medium-Power Silicon NPN Transistors |
Operating Temperature Range (°C) | –55° C to +125° C |
Mounting Type | Through Hole |
Shipment Weight | 0.005 kg |
Shipment Dimensions | 3 × 3 × 3 cm |
Package Includes:
1 x BD135 Transistor
Additional information
Origin | CN(Origin) |
---|---|
Condition | New |
Model Number | BD135 |
Type | Field-Effect Transistor |
Package Type | Throught Hole |
is_customized | Yes |
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